Preparation of Impurity-Doped ZnO Transparent Electrodes Suitable for LCD Applications by Magnetron Sputtering

Abstract

Impurity-doped ZnO thin films suitable for transparent electrode applications in LCDs that reduce resistivity and improve the uniformity of resistivity distribution have been prepared by newly developed oxidization-suppressing dc magnetron sputtering deposition methods that superimpose rf power and use more optimized targets. Descriptions are also presented concerning the observed increase in the resistivity of impurity-doped ZnO thin films resulting from exposure to long-term testing in a high humidity environment (air at 90% relative humidity and 60℃) as well as the increase in resistivity associated with a decrease of film thickness. The resistivity stability of impurity-doped ZnO thin films might be considerably improved by co-doping with another impurity.