This paper reports on the two types of new photodiode array sensors with fast readout speed and high stability to ultraviolet (UV) light exposure. These sensors have high full well capacity for absorption and high sensitivity for emission in each. By introducing multiple readout paths along the long side of the rectangle photodiode (PD), both types have achieved more than 150 times faster readout speed compared with general types. By introducing a PD structure with a thin and steep dopant profile p^+ layer formed on a flattened Si surface, a higher stability of the light sensitivity to UV light exposure was confirmed compared with a general PD structure.