1981 年 23 巻 6 号 p. 443-449
Changes in the proper thermoluminescence sensitivity of the phosphor were presented as an approximately quadratic equation of the irradiation temperature, when the phosphor was irradiated at high temperature with low dose of low LET radiation. The curve of the proper sensitivity given as a function of irradiation temperature shifted to low temperature side with decrease of the dose rate. Good agreement was obtained with the results expected from the exothermic model on thermoluminescence response. Three kinds of thermal activation energy in the capture reaction between trapping level and carriers released by irradiation were evaluated from the curve of the proper sensitivity of Mg2SiO4(Tb), CaSO4(Tm) and LiF(Mg, Cu, P) phosphors. The values of them varied from 0.012 to 0.12eV. Highly sensitive TLD phosphors showed a relationship of Ed>E2>E1 among three activation energies.