気相成長プロセスとナノスピンエレクトロニクス材料

抄録

This paper deals with some topics on the materials and the vapor-phase growth processes in the field of spinelectronics, where both charge and spin degrees of freedom of an electron realize various storage devices. First, a tunnel magneto-resistance effect is described to show how spinelectronic materials are utilized in the device. Second, a half-metallic ferromagnet, which improves the performance of spinelectronic devices drastically, and its growth process are explained. A molecular-beam epitaxy (MBE), one of non-equilibrium vapor-phase growth processes, plays an indispensable role in synthesizing the material. For example, a new class of half-metallic ferromagnet, previously nonexistent zinc-blende CrAs designed by ab initio calculations, was successfully grown by MBE.