Measurement of Electrical Conduction in c-Axis Oriented ZnO

Abstract

Large transparent ZnO polycrystals with high degrees of c-axis orientation were obtained by the vapor transport method. Homogeneous junctions were made by forming another polycrystal on the (001) surface so that they were aligned as either (001)//(001) or (001)⊥(001). The electrical conductivity of the oriented polycrystal was higher in the direction perpendicular to c-axis (‹001›) than that parallel to c-axis. The (001)//(001) junction had a high resistivity and it acted as the conduction barrier at low temperatures.