Synthesis Process Improvement of the Metallic Conductor Barium Plumbate Thin Films by Metal Alkoxide Method

Abstract

Synthesis process of the barium plumbate thin films by metal alkoxide method was improved to obtain the high quality films. The precursor solution was prepared using Ba metal and Pb(OⁱPr)₂ as raw materials, and 2-methoxyethanol as a solvent. The perovskite thin films with flat surface were formed by firing the films at a temperature higher than about 450°C immediately after coating the precursor solution on the MgO(100) substrate in the relatively dry atmosphere. The typical specific resistivity of films post-annealed at 550°C was about 1.2×10^-2Ωcm.