抄録
The oxidation mechanism of a dense Al4SiC4 body in the temperature range of 1250-1500°C was investigated using thermo-gravimetry (TG) measurements. Pure Al4SiC4 powder was synthesized from Al, Si and C powder, and a dense body was prepared by pulse electronic current sintering (PECS). The oxidation behavior of the body was indicated passive oxidation, and a superior oxidation resistance. Mullite and corundum formed on the surface of the oxidized body, the thickness of the oxidized layer formed by oxidizing at 1500°C for 10 h being about 100μm. The protective layer inhibited oxidation inward the Al4SiC4 body. Activation energy and frequency factor for oxidation of Al4SiC4 were 483kJ·mol-1 and 1.86×108kg2·m-4·s-1 at temperatures 1300-1500°C, respectively.
