Preparation of BaTiO3 Films by CVD
1991 Volume 99 Issue 1150 Pages 527-529
Details
1991 Volume 99 Issue 1150 Pages 527-529
Thin films of BaTiO3 were prepared by CVD using barium β-diketonate chelate {Ba(C11H19O2)2} and titanium tetra-isopropoxide {Ti[OCH(CH3)2]4} as precursors. BaTiO3 films deposited from 700° to 1000°C on MgO (100) substrates showed prominent a-axis orientation. X-ray pole figure measurement by Schulz's reflected method indicated that the CVD-BaTiO3 films deposited from 900° to 1000°C grew epitaxially on MgO (100) substrates. SEM observation showed that rectangular grains aligned two dimensionally in the plane of the films deposited at 1000°C.
