2009 年 117 巻 1365 号 p. 578-581
β-silicon carbide whiskers have been synthesized on a carbon fabric by a vapor-solid (VS) mechanism using the Chemical Vapor Infiltration (CVI) process. Optimum processing conditions for SiC whisker growth were determined by mapping of SiC deposition behavior. SiC was deposited on a carbon fabric substrate as a film or whiskers, depending on processing conditions. The mean diameter and line density of the whiskers was the highest at an input gas ratio of 50. As temperature increases, the mean diameter of the whiskers increased and the line density of whiskers decreased. In the optimum processing conditions, whiskers grew uniformly with high growth density and formed a networking structure between each of the carbon filaments resulting in a structure suitable for filter applications.
