Journal of the Ceramic Society of Japan
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Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD
Naoki WAKIYAYusuke KIMURANaonori SAKAMOTODesheng FUToru HARATakashi ISHIGUROTakanori KIGUCHIKazuo SHINOZAKIHisao SUZUKI
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Volume 117 (2009) Issue 1369 Pages 1004-1008

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Abstract

Polycrystalline Dy-doped SrTiO3 thin films deposited by pulsed laser deposition (PLD) on CeO2-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO3 thin film deposited on ZnIn2O4/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti4+ is substituted by Dy3+, and the Dy3+ acts as an acceptor. Further doping of Dy3+ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

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© 2009 The Ceramic Society of Japan
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