Volume 117 (2009) Issue 1369 Pages 973-977
Ga2O3 thin films were fabricated using the Ga nitrate and GaOOH aqueous solutions. The films were crystallized as β-Ga2O3 phase by heating at 700°C and the band gap of resultant films was about 4.9 eV. The films were uniform and the film from Ga nitrate solution was dense with porosity of about 3%. The resistivity of the blank film was about 107 Ω cm. The doped films with Ti and Zr exhibited rectifying properties on ITO sputtered glass substrate.