Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
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Fabrication of Ga2O3 thin films by aqueous solution deposition
Yutaka OHYAJyunya OKANOYuki KASUYATakayuki BAN
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Volume 117 (2009) Issue 1369 Pages 973-977

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Abstract

Ga2O3 thin films were fabricated using the Ga nitrate and GaOOH aqueous solutions. The films were crystallized as β-Ga2O3 phase by heating at 700°C and the band gap of resultant films was about 4.9 eV. The films were uniform and the film from Ga nitrate solution was dense with porosity of about 3%. The resistivity of the blank film was about 107 Ω cm. The doped films with Ti and Zr exhibited rectifying properties on ITO sputtered glass substrate.

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© 2009 The Ceramic Society of Japan
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