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Journal of the Ceramic Society of Japan
Vol. 121 (2013) No. 1416 (August) p. 627-631



Feature: Evolution of Dielectric Materials II: Papers

Epitaxial (KxNa1−x)NbO3 films with 3 µm in thickness were deposited at 240°C on (100)cSrRuO3//(100)SrTiO3 substrates by hydrothermal method. XRD patterns and Raman spectra were systematically changed with increasing x values. XRD patterns and Raman spectra was not dramatically changed by the annealing treatment at 600°C for 10 min under O2 atmosphere. On the other hand, the electrical and piezoelectric properties were improved by this annealing treatment; leakage current density was diminished and longitudinal piezoelectric response was increased to 69 pm/V at x = 0.51.

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