2016 年 124 巻 1 号 p. 18-22
Supercritical fluid deposition (SCFD) of SiO2-based films was proposed using TEOS precursor with oxidizing agents, for the purpose of low-temperature film deposition. The film deposition was performed in a batch-type closed chamber filled with supercritical carbon dioxide (CO2) fluid. The SiO2-based films were deposited on aluminum electrodes coated on silicon wafers (Al/Si) at the substrate temperature above 150°C. Oxidizing agents such as O2 gas and aqueous H2O2 solution promoted the removal of C2H5OH byproduct and the formation of strong Si–O network, whereas it also promoted the homogeneous nucleation of granular precipitation and the H2O adsorption in/on the resulting films. The processing temperature of the SCFD was significantly lower than those by thermal CVD and comparable or higher than those by plasma-enhanced CVD, although the resulting films obtained exhibited relatively large dielectric loss which depends on the presence of C2H5OH and H2O byproducts.
