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Journal of the Ceramic Society of Japan
Vol. 125 (2017) No. 8 p. 608-615

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http://doi.org/10.2109/jcersj2.17098

Special Articles: The 71st CerSJ Awards for Advancements in Ceramic Science and Technology: Review

Using the flexible valence states of transition-metal-oxides (TMOs), the optical, electronic, and magnetic properties can be simultaneously controlled by electrochemical oxidation and reduction. Herein we review our recent works on the electrochemically switchable functional thin-film device, which has a three-terminal thin-film-transistor (TFT) structure with the TMO as an active channel layer and the liquid-leakage-free electrolyte as a gate insulator. Thin films of vanadium dioxide, tungsten trioxide, and strontium cobaltite were selected as the channel layer. By applying the gate voltage at room temperature in air, the protonation/deprotonation or oxidation/deoxidation occurs in the TMO channels and their opto-electronic and electro-magnetic properties are reversibly switched by using the mobile ions in the solid TFT structure. The present device with liquid-leakage-free electrolyte provides a novel design concept for the development of future multifunctional switching devices based on TMOs.

Copyright © 2017 The Ceramic Society of Japan

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