Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
ISSN-L : 1348-6535
Special Articles: The 71st CerSJ Awards for Advancements in Ceramic Science and Technology: Review
Transition-metal-oxide based functional thin-film device using leakage-free electrolyte
Takayoshi KATASEHiromichi OHTA
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2017 Volume 125 Issue 8 Pages 608-615


Using the flexible valence states of transition-metal-oxides (TMOs), the optical, electronic, and magnetic properties can be simultaneously controlled by electrochemical oxidation and reduction. Herein we review our recent works on the electrochemically switchable functional thin-film device, which has a three-terminal thin-film-transistor (TFT) structure with the TMO as an active channel layer and the liquid-leakage-free electrolyte as a gate insulator. Thin films of vanadium dioxide, tungsten trioxide, and strontium cobaltite were selected as the channel layer. By applying the gate voltage at room temperature in air, the protonation/deprotonation or oxidation/deoxidation occurs in the TMO channels and their opto-electronic and electro-magnetic properties are reversibly switched by using the mobile ions in the solid TFT structure. The present device with liquid-leakage-free electrolyte provides a novel design concept for the development of future multifunctional switching devices based on TMOs.

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© 2017 The Ceramic Society of Japan
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