Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
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Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition
Yuji NAKABAYASHISatoru YAMADASatoshi ITOHTakeshi KAWAE
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2018 Volume 126 Issue 11 Pages 925-930

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Abstract

Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.

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© 2018 The Ceramic Society of Japan
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