2019 Volume 127 Issue 6 Pages 435-442
High-thermal-conductivity Si3N4 ceramics are desired for substrates in SiC power devices. We successfully fabricated highly c-axis-oriented Si3N4 ceramic by casting in a rotating-magnetic field and then sintered using a conventional gas pressure. As a result, the c-axis orientation of Si3N4 grains effectively improves the thermal conductivity. The sintering behavior of c-axis-oriented Si3N4 ceramics was investigated. The linear shrinkage ratio in the c-axis-oriented direction was smaller than that in the direction normal to the c-axis-oriented direction. Fine c-axis-oriented structures resulted from the orientation of β-Si3N4 seeds during the casting because they played as templates controlling the grain growth of β-Si3N4 nuclei and inducing the anisotropic sintering shrinkage.