Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
ISSN-L : 1348-6535
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Effects of guanidinium addition to CH3NH3PbI3−xClx perovskite photovoltaic devices
Taku KISHIMOTOAtsushi SUZUKINaoki UEOKATakeo OKU
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2019 Volume 127 Issue 7 Pages 491-497

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Abstract

CH3NH3PbI3−xClx-based photovoltaic devices with guanidinium [C(NH2)3, GA] were fabricated and characterized. The additive effects of guanidinium iodide, formamidinium [CH(NH2)2, FA] iodide, and guanidinium chloride were compared. Short-circuit current densities, open-circuit voltages, series resistances and shunt resistances were improved by the GA addition. The short-circuit current densities were increased by FA addition with GA. The incident photon-to-current conversion efficiency increased, which results from the suppression of pin-holes in perovskite layers by GA addition. The conversion efficiencies were improved by GA addition. X-ray diffraction showed that the lattice constants of the perovskite crystals increased by GA and FA addition, and that the GA substituted partially at the CH3NH3-site.

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© 2019 The Ceramic Society of Japan
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