Structural characterization of mist chemical vapor deposited amorphous aluminum oxide films using water-free solvent

Abstract

Excellent quality amorphous aluminum oxide (AlO_x) thin films have been obtained by atmospheric pressure solution-processed mist chemical vapor deposition (mist-CVD) technique at 400°C using water-free solvent. X-ray fluorescence investigations verified the formation of AlO_x film by the mist-CVD. X-ray diffraction, X-ray photoelectron spectroscopy, ellipsometry and X-ray reflectivity analyses revealed that the synthesized amorphous AlO_x films have bandgap of 6.5 eV, refractive index of 1.64 and mass density of 2.78 g/cm³. These values are comparable to those reported for high-quality amorphous Al₂O₃ thin films deposited by atomic layer deposition method.