Crystal Structure and Oxide Ion Conductivity of the In-Containing  K2NiF4-type Oxides

Sumio KATO; Masataka OGASAWARA; Mikio SUGAI; Shinichi NAKATA

doi:10.14852/jcersjsuppl.112.0.S681.0

Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue

Session ID : 9

DOI https://doi.org/10.14852/jcersjsuppl.112.0.S681.0

Conference information

Host: The Ceramic Society of Japan

Co-host: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Papers

Crystal Structure and Oxide Ion Conductivity of the In-Containing K₂NiF₄-type Oxides

Sumio KATO, Masataka OGASAWARA, Mikio SUGAI, Shinichi NAKATA

Author information

Keywords: Oxide ion conductivity, K₂NiF₄-type structure, Indium, Galium

CONFERENCE PROCEEDINGS FREE ACCESS

Details

Abstract

Crystal structure and electrical properties of the K₂NiF₄-type oxides in the La-Sr-In-Ga-O system were investigated. Ga substituted LaSrInO₄ solid solutions were synthesized at 1573-1673 K for 36 h in air. The crystal structures of LaSrIn_1-yGa_yO₄ changed from orthorhombic for y=0-0.3 to tetragonal for y=0.4, 0.5 and 0.9, indicating that distortion of (In,Ga)O₆ octahedra network decreased with increasing Ga content. These compounds exhibited semiconducting behavior in the temperature range of 550-1050 K in air. From oxygen partial pressure dependence of the conductivity, it is clarified that they exhibited oxide ion conduction at low oxygen partial pressure region and hole conduction in air. The conductivity also decreased with decreasing unit cell volume due to Ga substitution in In site.

Corresponding author

Register with J-STAGE for free!