平行ビームを使ったX線トポグラフィによるSiCの転位観察

抄録

Dislocations in silicon carbide (SiC) have been analyzed by means of double-crystal X-ray topography. Strain caused by a dislocation is sensitively observed by using the X-rays with small angular divergence. In this article, the authors describe the principle and method of the double-crystal X-ray topography, introduce SiC as a material developing for power electronics devices, and show practical observations of dislocations with high resolution.