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Nihon Kessho Gakkaishi
Vol. 59 (2017) No. 4 p. 159-165



Review Articles

We present an approach for constructing a realistic structure model of inhomogeneous amorphous materials by combining angstrom-beam electron diffraction, synchrotron X-ray scattering, and simulation techniques. Local structure information obtainable by angstrom-beam electron diffraction is effective to choose a probable model from some possible models that satisfy a structure factor of X-ray scattering. We applied this approach to amorphous SiO and successfully constructed a realistic model including nanoscale Si and SiO2-like regions together with abundant interfacial Si suboxides.

Copyright © 2017 The Crystallographic Society of Japan

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