特集 電子線で何が観測できるか
エピタキシャルグラフェンの構造と物性
2019 年 61 巻 1 号 p. 35-42
詳細
2019 年 61 巻 1 号 p. 35-42
Epitaxial graphene growth on SiC is the only technique to obtain wafer-scale single-orientation graphene directly on the insulating substrate. It is then suitable for electronics applications. Understanding the growth mechanism of graphene is necessary for obtaining high-quality graphene. In order to improve the electronic structure of graphene, interface engineering is important. Here, recent researches including the growth mechanism and the interface engineering, mainly revealed by electron microscopy are reviewed.
