1985 年 27 巻 3 号 p. 177-188
This report briefly introduces the growth techniques of Si and GaAs crystals in tha presence of a magnetic field. Since Hoshi et al, reported Czochralski (CZ) Si crystal growth in the presence of a transverse magnetic field in 1980, there extensive studies have been carried out by several groups. As for the apparatus for magnetic field application, a new technique is developed using a small coil to apply a vertical magnetic field to the melt. A new magnetic-applied apparatus using a superconducting magnet is also developed. Crystals with a homogeneous dopant distribution are realized by suppressing thermal convection and improving thermal symmetry by means of optimizing magnetic field strength and crystal and crucible rotation conditions. Oxygen concentration in CZ Si crystal is controlled to a large extent by applying the magnetic field. The potential for controlling the native defect density in Liquid Encapsulated Czochralski (LEC) Ga As crystal is also discussed.