III-V族半導体 (GaAs) 中の点欠陥と物性
1986 年 28 巻 2 号 p. 103-113
詳細
1986 年 28 巻 2 号 p. 103-113
Physical properties of point defects in III-V semiconductors, especially in GaAs, are discussed in view of their significant roles in device characteristics. As a representative, recent advances in the identification of EL 2, which is one of the most intensively studied point defects, are reviewed in conjunction with an antisite arsenic. The results, both experimental and theoretical, favor the models in which EL 2 is claimed to be originated from a complex or an arsenic-aggregate including antisite arsenic (s) . Such a defect is conceived as one of the defect structures of excess arsenics which are specific for compound semiconductors. [J. Cryst. Soc. Jpn. 28, 103 (1986) ] .
