3. 有機金属気相法による原子層成長
1991 年 33 巻 3 号 p. 119-128
詳細
1991 年 33 巻 3 号 p. 119-128
Atomic layer epitaxy has been developed for III-V compounds using metalorganic and hydride sources. The growth rate was clearly self-limited under a wide range of growth conditions. Epitaxial layers of high purity without carbon contamination could be grown. The growth mechanism was studied and a model based on dissociative adsorption of group III source molecules was proposed. Strained-superlattices (GaAs) m (GaP) n were grown and exhibited an ideal self-limiting mechanism even for the monolayer superlattice case. The selective growth of fine patterns and good uniformity of the epitaxial thickness on a large-scale wafer showed that ALE is promising for a process technology.
