日本結晶学会誌
Online ISSN : 1884-5576
Print ISSN : 0369-4585
ISSN-L : 0369-4585
4. 分子線成長法による原子層の成長制御
井上 直久
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ジャーナル フリー

1991 年 33 巻 3 号 p. 129-140

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Recent advancements in molecular beam epitaxy are reviewed with special emphasis on the control down to a monolayer. Extensive studies have succeeded in shedding light on atomic scale growth mechanisms, which enabled the development of novel growth technologies. Though submicron scale terraces are now realized, much effort is still necessary for meeting the requirements from advanced quantum effect devices.

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© 日本結晶学会
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