1991 年 33 巻 3 号 p. 169-174
Concept of atomic layer etching is described. Experimental results on the atomic layer con-trolled etching are reported. Under alternative supply of Cl2, the etching rate saturates at 1/3 mono-layer/cycle as a function of Cl gas feeding rate. By using Cl radical, the etching rate saturates at one atomic layer/cycle as a function of Cl gas feeding rate under a proper etching condition.