日本結晶学会誌
Online ISSN : 1884-5576
Print ISSN : 0369-4585
ISSN-L : 0369-4585
9.各種材料の層状成長
9.2シリコンウエハの自然酸化
八坂 龍広宮崎 誠一広瀬 全孝
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1991 年 33 巻 3 号 p. 182-187

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The principal role of silicon-fluorine bonds in the chemical nature of HF-etched Si surfaces has been studied by angle resolved X-ray photoelectron spectroscopy. The fluorine coverage and the native oxide growth thickness have been systematically measured as functions of HF concentration, pure water rinse time, air or N2+O2 gas exposure time and gas phase H2O concentration. It is found that the existence of Si-F bonds of about 0.12 monolayers on the surface strongly suppresses the native oxide growth. This is explained by a model in which Si-F bonds chemically stabilize the surface reactive sites such as atomic steps as supported by the result of the layer-by-layer oxidation of Si.

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