日本結晶学会誌
Online ISSN : 1884-5576
Print ISSN : 0369-4585
ISSN-L : 0369-4585
Si結晶中の格子面再配列: {113} 面欠陥の原子配列
竹田 精治
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ジャーナル フリー

1991 年 33 巻 6 号 p. 333-338

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Structural analysis of the defect on {113} in Si has been carried out by transmission electron diffraction and microscopy. A proposed atomic model shows that interstitial Si atoms aggregate on {113} and form a reconstructed structure in the interior of a Si crystal. The model is characterized by 5-, 6-, 7- and 8-membered atomic rings and has no dangling bond. The 6-membered rings constitute the tiny rods of the hexagonal structure, and the 8-membered rings are related to the {113} surface structure.

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