日本結晶学会誌
Online ISSN : 1884-5576
Print ISSN : 0369-4585
ISSN-L : 0369-4585
Si-MBE成長への試料電流効果
市川 昌和
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ジャーナル フリー

1991 年 33 巻 6 号 p. 339-345

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Effects of sample current on Si (001) 2×1 domain conversions and on Si-MBE growth, are investigated. It is found that diffusion anisotropy of Si adatoms on 2×1 surfaces exists and that the domain conversion velocity is proportional to the sample current. This indicates that the conversion process is induced by the diffusion anisotropy and the force acting on positively charged Si adatoms. Preferential detachment of atoms from steps to lower sides than upper ones is also found. This causes biatomic step growth during Si-MBE growth process.

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