Recent studies on lattice defects in silicon single crystals using synchrotron radiation topography are reviewed. Two types of methods are described, the plane wave topography using highly collimated x-rays with an angular divergence of less than 0.01 arcsec and the Lang topography using high energy x-rays of 60keV. Experiments of imaging of grown-in microdefects in FZ- and CZ-silicon crystals and growth striations in MCZ-Si crystals show that these methods are highly sensitive to minute lattice strain of the order of 10-7 which could not be measured by the conventional x-ray topograpy.
