ZnO-In₂O₃系透明導電性酸化物

抄録

Structural and physical properties of bulk and thin film samples in ZnO-In₂O₃ system are shown. Several homologous compounds Zn_kIn₂O_k+3 where k ≥ 3 for bulk system and where k ≥2 for thin film system were observed. Trends in electrical and optical properties, as functions of k in Zn_kIn₂O_k+3, were identified. The potential for metastable ZnIn₂O₄ (k = 1) was discussed. The existence of k = 1 and 2 crystalline members at [In] / ( [In] + [Ga] ) = 0.5, but not at [In] / ( [In] + [Ga] ) =1, together with the change in sign of the slope of the lattice constants at [In] / ( [In] + [Ga] ) = 0.5 suggests that Zn_kInGaO_k+3 would be the constitutive compounds, as opposed to the end members Zn_kIn₂O_k+3 and Zn_kGa₂O_k+3.