低温工学
Online ISSN : 1880-0408
Print ISSN : 0389-2441
ISSN-L : 0389-2441
解説
MgB2薄膜・接合作製の現状とデバイス応用への展望
内藤 方夫
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ジャーナル フリー

2006 年 41 巻 11 号 p. 463-473

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This article reviews the developments over the past six years in the thin-film growth and junction fabrication of superconducting MgB2 materials, including future prospects for MgB2 superconducting electronics. The most serious problem in the thin-film growth of MgB2 is the high Mg vapor pressure required for phase stability. This problem has made in-situ film growth difficult. At present, however, high-quality in-situ films can be prepared either by a low-temperature route or a high-temperature route. Current best films substantially exceed bulk single crystals in size and quality. The technology to fabricate MgB2 junctions has also shown great progress, and now all-MgB2 SIS Josephson junctions are realized, which demonstrates a great potential for MgB2 in superconducting electronics.

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© 2006 公益社団法人 低温工学・超電導学会 (旧 社団法人 低温工学協会)
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