In this paper, we reviewed the current progress of superconducting devices, specially High Tc three terminal devices. Properties of High Tc material and developments of the process technology are briefly summarized. A superconducting base three terminal device of In/(Ba, Rb) BiO3/SrTiO3(Nb) structure was procuced and evaluated. With a base thickness of 70nm, α=0.94 and β=10 were achieved. High Tc field effect transistors and flux-flow transistors, which have been operated in a good transistor action, are reviewed.
