超伝導磁石用GaAsホール素子
1974 年 9 巻 3 号 p. 146-150
詳細
1974 年 9 巻 3 号 p. 146-150
Heavily doped n-type GaAs, whose carrier concentration is about 1×1018cm-3, exhibits magnetic-field-independent and temperature-insensitive Hall coefficient up to 100kG and 100°C. Since such characteristics are excellent at liquid helium temperatures, Hall element prepared from this material is especially useful for superconducting magnet.
A convenient digital gaussmeter employing this Hall element is confirmed, by means of NMR calibration, to indicate the exact response at 1mV/10kG and the resolution down to ±10G.
