2017 Volume 101 Issue 6 Pages 234-238
The nonlinearities of two silicon photodiodes (Si PDs) in visible and infrared light were experimentally measured in an optical power range from nanowatts to milliwatts. Spectral supralinearities for a Si PD were clearly observed in visible and infrared visible light. This resulted from a decrease in the recombination loss of the generated photocurrent ratio in the silicon-bulk region or the interface between the Si bulk and the silicon dioxide. These experimentally measured results are adequate for correcting the responsivity of Si PDs in a wide optical power range and predicting the spectral supralinear behaviours.