We developed an electroluminescent (EL) device using boron-doped nanocrystalline silicon (nc-Si) particles that effectively inject a carrier into a luminous layer at a low direct current (DC) voltage of 2.0 V. The injection efficiency of the carrier strongly depends on the boron concentration. The injection quantity of a carrier in an EL device with a high boron concentration of 2.3 at.% was made almost double that of an EL device without boron doping. This was due to both the lowering of the series resistance of the EL device using the doping of boron into nc-Si particles and the coagulation of nc-Si particles using a hydrofluoric acid (HF) treatment. The injection quantity of the carrier can be considerably improved using boron doping into the nc-Si particles and the HF treatment.