2010 年 13 巻 4 号 p. 280-287
In this paper, a SiC module in which the devices are operated beyond the junction temperature of 200°C was designed, manufactured and tested. The module was designed by considering the heat-resistance of each constituent material to realize a continuous heat distribution. We found that the ratio of voids in the die-bonding material can reduced by about 5% in volume by choosing the reflow conditions of the temperature profile and the environmental condition for Au–Sn and Sn–Ag–Cu lead-free solders. The 200°C operation of the designed module was confirmed by directly feeding a current into the SiC chip to elevate the temperature of the chip. In order to demonstrate real 200°C SiC device operation with the present module, we designed and assembled a DC–DC converter with a SiC-RESURF-JFET and SiC-SBD. The present module was successfully operated at a chip temperature of 200°C in the DC–DC converter.