エレクトロニクス実装学会誌
Online ISSN : 1884-121X
Print ISSN : 1343-9677
技術報告
200℃動作SiCスイッチングモジュールの開発
徳田 人基田中 保宣仲川 博青柳 昌宏福田 憲司大橋 弘通築野 孝星野 孝志並川 靖生林 秀樹
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2010 年 13 巻 4 号 p. 280-287

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In this paper, a SiC module in which the devices are operated beyond the junction temperature of 200°C was designed, manufactured and tested. The module was designed by considering the heat-resistance of each constituent material to realize a continuous heat distribution. We found that the ratio of voids in the die-bonding material can reduced by about 5% in volume by choosing the reflow conditions of the temperature profile and the environmental condition for Au–Sn and Sn–Ag–Cu lead-free solders. The 200°C operation of the designed module was confirmed by directly feeding a current into the SiC chip to elevate the temperature of the chip. In order to demonstrate real 200°C SiC device operation with the present module, we designed and assembled a DC–DC converter with a SiC-RESURF-JFET and SiC-SBD. The present module was successfully operated at a chip temperature of 200°C in the DC–DC converter.

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