エレクトロニクス実装学会誌
Online ISSN : 1884-121X
Print ISSN : 1343-9677
ISSN-L : 1343-9677
研究論文・技術報告
高速流めっき法による短時間Cu貫通電極形成および電極の微細組織
門田 裕行菅野 龍一伊藤 雅彦大貫 仁
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2011 年 14 巻 6 号 p. 513-518

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We have established a plating condition which shortens the plating time for through-electrode silicon vias with 10 μm diameters and 70 μm depths within an 8-inch wafer from 90 min to 60 min. We evaluated the microstructures after annealing as a function of plating conditions. It is found that the grain size of the plating films formed with conventional, i.e., high-pulse current density and low-duty cycle pulse conditions, are smaller than those for high-speed solution flow plating films. We also showed clearly that the diamond pyramid hardness number (Hv) of through-electrode Cu plating films is proportional to the square of the reciprocal of the grain size (d).

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