2013 年 16 巻 4 号 p. 300-304
A wire bond-less SiC power module with sandwich structure is proposed for use in high-temperature devices. The module is composed of two SiC-transistors and two SiC-diodes, which are sandwiched between two ceramic circuit boards. The devices are bonded on the circuit boards using a sintered material (submicron Au paste) with a precise alignment (within ±5 μm) and height control (within ±7 μm). These two circuit boards are soldered with Au-12%Ge solder, resulting in a structured sandwich module within a tilting level of 15 μm/11-mm-substrate. No damage is observed on the devices and internal connections in the module even after 500 cycles of a thermal cycling test (-40°C~250°C).