2002 年 5 巻 1 号 p. 58-63
Cu metal and low k materials have been proposed as metallization process to reduce RC delay of device. Electro plating was selected for the Cu metallization process due to its better gap-filling capability and lower cost. However, electoless plating is nominated for cap material deposition process since its plating results in selective deposition on metal. It is herein reported that Ni-B deposited by electroless plating can be suitable for cap material on Ag, which is nominated as metal after Cu. As a result, it has been confirmed that Ni-B by electrolesss plating with DMAB has the barrier effect against Ag, and has selectivity only on Ag with good deposition rates.