エレクトロニクス実装学会誌
Online ISSN : 1884-121X
Print ISSN : 1343-9677
ISSN-L : 1343-9677
DMABを還元剤とした無電解NiBめっきの浴安定性とめっき膜のはんだ濡れ性評価
田代 雄彦大高 健山本 誠二川島 敏本間 英夫
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2002 年 5 巻 6 号 p. 591-598

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The electroless Ni-B plating has attracted for the application of the electronics fields. However, it has not achieved to improve of bath stability and bath life yet. Accordingly, bath stability, deposition rate, boron content and wettability of the deposited films were studied using thirty kinds of complexing agents. Since, the reducing power of DMAB is stronger than the other reducing agents, bath stability is able to be improved by the balance of the reducing power and selection of complexing agent. Boron content in the deposited films decreased from 6wt% to 2wt% with increasing the deposition rate at the acidic region. On the other hand, boron content in the deposited films under alkaline region did not much influence by the bath pH and showed less than lwt%. Generally, tensile stress of deposited Ni-B films is higher than the Ni-P films. However, when the sulphur compounds are added in the plating bath, the stress can be greatly reduced.

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