Transactions of The Japan Institute of Electronics Packaging
Online ISSN : 1884-8028
Print ISSN : 1883-3365
ISSN-L : 1883-3365
Technical Papers
Fabrication of Low-Threshold Discreet Schottky Barrier Diode Using Natural Pyrite Crystal
Riku AndoNarihiko Maeda
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2023 Volume 16 Pages E22-004-1-E22-004-5

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Abstract

A low-threshold schottky barrier diode using natural pyrite has successfully been fabricated for the first time. The schottky and ohmic electrodes were successfully mounted and molded onto natural FeS2(pyrite) crystals. The I-V characteristics of the devices were measured, and the typical Schottky barrier diode characteristics were confirmed. The barrier height estimated by fitting was shown to be as low as 0.60 eV, indicating that the device has low-threshold characteristics.

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© 2023 The Japan Institute of Electronics Packaging
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