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日本金属学会誌
Vol. 70 (2006) No. 1 P 43-46

記事言語:

http://doi.org/10.2320/jinstmet.70.43


  The removal of phosphorus and antimony from molten silicon under low vacuum conditions has been investigated by using a glow discharge electron gun. The gun could generate electron beam and melt silicon at the low vacuum of 5-7 Pa. Phosphorus and antimony in silicon were evaporated and removed from silicon by the electron beam melting: the concentration of phosphorus decreased from about 200 ppm to about 1 ppm in one hour and that of antimony was reduced from about 300 ppm to below 0.1 ppm in 5 minutes. The removal rates obtained at the low vacuum were almost the same as those observed under high vacuum conditions.

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