Journal of the Japan Institute of Metals and Materials
Online ISSN : 1880-6880
Print ISSN : 0021-4876
ISSN-L : 0021-4876
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Characterization of Oxide-Metal Interfaces with Atomic Level by Photoelectron Spectroscopy
Michiko Yoshitake
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2014 Volume 78 Issue 11 Pages 408-414

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Abstract

  At metal oxide (AO)-metal (M) interfaces, metal (M) atoms can make bonds with metal oxide through either oxygen (O) atoms or metal (A) atoms that composed of the oxide. Examples of the identification of an element at the interface in atomic level using photoelectron spectroscopy have been demonstrated for alumina, zinc oxide and cerium oxide. Software, which predicts interface bonding according to a method developed by the author, and which is open to public, is presented. It is demonstrated that the difference in the interface bonding species has great influence on the band offset, the energy difference between the Fermi level and the valence band in the band energy diagram. The observations of such difference in band offset using photoelectron spectroscopy are also provided.

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© 2014 The Japan Institute of Metals and Materials
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