Studies on Semiconductors (VI). Effect of Semiconductive Impurities in Copper for Cuprous Oxide Rectifier on its Rectifying Characteristics

Abstract

In order to furnish fundamental data for the production of cuprous oxide rectifier of high quality, the effect of semiconductive elements included in copper on the rectifying properties was studied. In this study, the measurement of the rectifying characteristics, their temperature dependence and the change of forward current at 0.8 V and reverse current at 6 V in running test was carried out and the following results were obtained: (1) When copper contains Si, Se, Te and Bi (1/10∼1%), it is impossible to make rectifying disk mainly because of nonadherence of the oxide layer. (2) With the increase of silicon content from 0.001% to 1%, the rectifying resistance decreases both in the conducting and reverse directions, and when copper contains 1% Si, its rectifying direction is just opposite to that of the others. (3) Upon increasing selenium content from 0.001% to 0.1%, the rectifying resistance increases in both directions. (4) Upon increasing tellurium content from 0.001% to 0.01%, the rectifying resistance increases in the conducting direction, while decreases in the reverse direction. (5) When copper contains 0.01% Bi, the rectifier shows the highest efficiency. (6) The forward current in running test increases in the first few minutes, but afterwards it is kept almost constant. (7) The creeping percentage increases in the first few minutes and afterwards increases gradually. The rectifying disk containing tellurium shows high creeping property.