抄録
Preparation of SmBa2Cu3Oy(Sm123) and BaZrO3(BZO) films by pulsed laser deposition was investigated using MgO single crystalline substrates. Highly c-axis oriented Sm123 films with a four-fold symmetry were successfully deposited on MgO single crystals, which had a Tc onset of 93 K and a zero resistance at 89 K. The BZO buffer improved in-plane alignment of the Sm123. In addition, highly textured BZO and Sm123 films were realized on in-plane aligned MgO films grown by inclined substrate deposition. The FWHM(full width at half maximum)’s of in-plane and out-of-plane alignment for the textured Sm123 in the combination were reached 10.5° and 4.0°, respectively. The reason that the BZO was effective on the epitaxial growth of Sm123 films can not be explained only by the idea of a simple lattice match, since the lattice constant of BZO is close to that of MgO. The effect of the BZO buffer was discussed in view of the interface energy based on crystallographic consideration. It was found that a chemical bonding at the interface is important for interface energy as well as the lattice match. Further, the conception of the interface energy on hetero-epitaxial growth was applied for the c⁄a-axes orientation behavior of RE123.
