日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
蒸着膜のエピタキシャル成長と成長様式
後藤 芳彦
著者情報
ジャーナル フリー

1983 年 10 巻 3-4 号 p. 167-187

詳細
抄録

In this report, especially focussed on the Stranski-Krastanov growth mode in growth of vacuum evaporated films, experimental evidences on epitaxy and growth modes for a Ag-Si (111) deposition system and some other systems are reviewed, which were obtained by techniques of RHEED, AES, TDS and SEM. By using RHEED, not only the ordered structures of two-dimensional adsorbed phase, but also epitaxial relation of three-dimensional crystallites can be known. The measurement of Auger amplitude versus coverage gives us reliable evidences on growth modes, and from this measurement the surface composition of the first monolayer can be determined. By the TDS measurement, it is possible to separate the evaporation of two-dimensional adsorbed phase from that of three-dimensional crystallites in different temperatures. By using UHV-SEM, in situ observation of growing crystallites on clean surface is possible.

著者関連情報
© 1983 日本結晶成長学会
前の記事 次の記事
feedback
Top