日本結晶成長学会誌
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
エピタキシャル成長の原子論から量子的アプローチヘ : 原子制御を支える成長理論への期待(<小特集>エピタキシャル成長の量子論)
中山 弘
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ジャーナル フリー

1996 年 23 巻 1 号 p. 17-22

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Recent develoments in the study of epitaxial-growth mechanism of semiconductors strongly suggest the importance of the role of electronic states during the elemental epitaxial growth processes. Especially, surface-electronic structure of growing surface determines the surface reconstruction structures, adsorption probability and migration energy at growing surface. It is also noteworthy that atom correlation mediated by the surface electronic states cause cooperative phenomena such as reconstruction-phase transition or order-disorder transition during epitaxial growth.

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© 1996 日本結晶成長学会
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