半導体成長素過程の量子論(<小特集>エピタキシャル成長の量子論)

抄録

According to the recent development of nano-technologies, we have obtained the detail information on the atomic structures of surface reconstructions. In this circumstance, many attemptes are made both experimentally and theoretically, to clarify the microscopic mechanism of epitaxial growth In this report, we describe the first principles study of the epitaxial growth process on GaAs surfaces, and make clear the crucial problems in the quantum theory of epitaxial growth.